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Typical Characteristics T C = 25°C unless otherwise noted
2000
1000
100
10 μ s
100 μ s
1ms
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
STARTING T J = 25 o C
10
OPERATION I N THI
10ms
AREA MAY BE
LIMITED BY r DS(ON)
DC
10
1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
STARTING T J = 150 o C
0.1
0.1
1 10
V DS , DRAIN TO SOURCE VOLTAGE (V)
100
1
.01
0.1 1 10
t AV , TIME IN AVALANCHE (ms)
100
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
150
PULSE DURATION = 80 μ s
150
120
DUTY CYCLE = 0.5% MAX
V DD = 15V
120
V GS = 10V
V GS = 7V
V GS = 6V
90
60
T J = 175 o C
90
60
30
0
T J = 25 o C
T J = -55 o C
30
0
V GS = 5V
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
4. 0
4.5
5. 0
5. 5
6.0
0
0.5
1.0
1.5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
7
PULSE DURATION = 80 μ s
2.5
PULSE DURATION = 80 μ s
6
5
4
3
DUTY CYCLE = 0.5% MAX
V GS = 6V
V GS = 10V
2.0
1.5
1.0
0.5
DUTY CYCLE = 0.5% MAX
V GS = 10V, I D =80A
0
2 0
40
I D , DRAIN CURRENT (A)
6 0
80
-80
-40
0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C)
200
Figure 9. Drain to Source On Resistance vs Drain
Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
?2002 Fairchild Semiconductor Corporation
FDB045AN08A0 Rev. C1
4
www.fairchildsemi.com
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